Effect of Thermal Fluctuations on the Radiative Rate in Core/Shell Quantum Dots

The effect of lattice fluctuations and electronic excitations on the radiative rate is demonstrated in CdSe/CdS core/shell spherical quantum dots (QDs). Using a combination of time-resolved photoluminescence spectroscopy and atomistic simulations, we show that lattice fluctuations can change the radiative rate over the temperature range from 78 to 300 K. We posit that the presence of the core/shell interface plays a significant role in dictating this behavior. We show that the other major factor that underpins the change in radiative rate with temperature is the presence of higher energy states corresponding to electron excitation into the shell. These effects should be present in other core/shell samples and should also affect other excited state rates, such as the rate of Auger recombination or the rate of charge transfer

Unraveling the Impurity Location and Binding in Heavily Doped Semiconductor Nanocrystals: The Case of Cu in InAs Nanocrystals

The doping of colloidal semiconductor nanocrystals (NCs) presents an additional knob beyond size and shape for controlling the electronic properties. An important problem for doping with aliovalent elements is associated with resolving the location of the dopant and its structural surrounding within small NCs, an issue directly connected with self-purification. Here we used a postsynthesis diffusion-based doping method for introducing Cu impurities into InAs quantum dots. X-ray absorption fine structure (XAFS) spectroscopy experiments along with first-principle density functional theory (DFT) calculations were used to probe the impurity sites. The concentration dependence was investigated for a wide range of doping levels, helping to derive a self-consistent picture where the Cu impurity occupies an interstitial site within the InAs lattice. Moreover, at extremely high doping levels, Cu–Cu interactions are identified in the XAFS data. This structural model is supported by X-ray diffraction data, along with the DFT calculation. These findings establish the reproducibility of the diffusion-based doping strategy giving rise to new opportunities of correlating the structural details with emerging electronic properties in heavily doped NCs

Semiconductor Seeded Nanorods with Graded Composition Exhibiting High Quantum-Yield, High Polarization, and Minimal Blinking

Seeded semiconductor nanorods represent a unique family of quantum confined materials that manifest characteristics of mixed dimensionality. They show polarized emission with high quantum yield and fluorescence switching under an electric field, features that are desirable for use in display technologies and other optical applications. So far, their robust synthesis has been limited mainly to CdSe/CdS heterostructures, thereby constraining the spectral tunability to the red region of the visible spectrum. Herein we present a novel synthesis of CdSe/Cd_1–<i>x</i>Zn_<i>x</i>S seeded nanorods with a radially graded composition that show bright and highly polarized green emission with minimal intermittency, as confirmed by ensemble and single nanorods optical measurements. Atomistic pseudopotential simulations elucidate the importance of the Zn atoms within the nanorod structure, in particular the effect of the graded composition. Thus, the controlled addition of Zn influences and improves the nanorods’ optoelectronic performance by providing an additional handle to manipulate the degree confinement beyond the common size control approach. These nanorods may be utilized in applications that require the generation of a full, rich spectrum such as energy-efficient displays and lighting